The QPA3069 power amplifier from Qorvo is now being shipped by Mouser Electronics. Engineered for defence and aerospace applications, the 100W QPA3069 provides high power density and power-added efficiency for 2.7 - 3.5GHz radio frequency (RF) based designs.
Fabricated with Qorvo's production 0.25µm gallium nitride-on-silicon carbide (GaN-on-SiC) process, this packaged high-power, S-band amplifier simplifies system integration in a compact 7.0 × 7.0 × 0.85mm package.
The device features greater than 58dBm of saturated output power and over 25dB of large-signal gain.
Its power-added efficiency (PAE) is rated at 53%, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 50dBm.
The amplifier features input return loss as low as 13 dB and output return loss as low as 7dB. To simplify system integration, the QPA3069 also supplies two RF ports that are fully matched to 50 ohms, each integrated with DC blocking capacitors.
Qorvo's QPA3069 has an operating temperature of minus 40 to 85 degrees Celsius, and a power dissipation of 117W at the top of the temperature range.
Lead-free the device is suitable for S-band radar applications.